Synthesis of high-quality, large-area single-layered graphene using low-pressure chemical vapor deposition on copper plate surfaces

Huynh Hoang Trung * , Vo Quoc Khanh , Phi Cong Khanh , Nguyen Long Vu , Phan Van Hoang , Nguyen Thanh Trung Tuyen and Tran Ngoc Son

* Corresponding author (trunghh@hcmute.edu.vn)

Article Sidebar

Full Text: PDF

Received: 31 Jul 2024
Revised: 03 Sep 2024
Accepted: 15 Oct 2024
Published: 18 Oct 2024
Title: Synthesis of high-quality, large-area single-layered graphene using low-pressure chemical vapor deposition on copper plate surfaces
DOI: 10.22144/ctujos.2024.422
Views
53
Downloads
29
Crossref
Scopus
Google Scholar
Europe PMC
How to Cite
Trung, H. H., Khanh, V. Q., Khánh, P. C., Vũ, N. L., Hoàng, P. V., Tuyến, N. T. T., & Sơn, T. N. (2024). Synthesis of high-quality, large-area single-layered graphene using low-pressure chemical vapor deposition on copper plate surfaces . CTU Journal of Science, 60(5). https://doi.org/10.22144/ctujos.2024.422
Issue
Vol. 60 No. 5 (2024)
Section
Engineering Technology

Abstract

In this work, the low-pressure chemical vapor deposition (LP-CVD) method was used to fabricate high-quality single-layered graphene with a large area on the surface of a copper plate. The development pace and quality of graphene were significantly influenced by temperature and the CH4:H2 ratio. The optimal monolayer graphene was produced at around 1000oC with a growth period of 120 minutes and a CH4:H2 ratio of 35:6 sccm. The total pressure in the chamber varied from 1,0 to 1,2 Torr. A narrow full width at half maximum (FWHM) value of 2D peak (~ 63,43 cm-1) and high Raman peak ratios I2D/IG (~ 3,10) confirmed the single-layered graphene. The negligible imperfections and great homogeneity of the graphene were confirmed by the minute Raman D peaks. Many scientists have considered these temperature and pressure parameters to be optimal for synthesizing high-quality graphene, which promises to open up new applications in the fields of photonics, electrochemistry, electronics, and toxic gas sensors.

Keywords: Chemical vapor deposition, copper plate, graphene, Raman spectroscopy, single-layered

Tóm tắt

Trong nghiên cứu này, phương pháp lắng đọng hơi hóa học áp suất thấp được sử dụng để chế tạo graphene đơn lớp chất lượng cao với diện tích lớn trên bề mặt tấm đồng. Tốc độ hình thành và chất lượng của graphene bị ảnh hưởng đáng kể bởi nhiệt độ và tỷ lệ khí nền CH4:H2. Graphene đơn lớp tối ưu được chế tạo tại nhiệt độ khoảng 1000oC với khoảng thời gian tăng trưởng là 120 phút và tỷ lệ lưu lượng CH4:H2 là 35:6 sccm. Áp suất tổng trong buồng phản ứng thay đổi trong khoảng 1,0 đến 1,2 Torr. Độ rộng giữa đỉnh (FWHM) của đỉnh 2D (~ 63,43 cm-1) và tỷ lệ cường độ đỉnh I2D/IG (~ 3,10) của quang phổ Raman đã xác nhận graphene đơn lớp. Các khuyết tật không đáng kể và tính đồng nhất cao của graphene được xác nhận bởi đỉnh D phổ Raman thấp. Thông số nhiệt độ và áp suất này đã được nhiều nhà kha học đánh giá là tối ưu để tổng hợp graphene đạt chất lượng cao, hứa hẹn mở ra những ứng dụng mới trong các lĩnh vực quang tử, điện hóa, điện tử và cảm biến khí độc.

Từ khóa: Đơn lớp, graphene, lắng đọng hơi học, quang phổ Raman, tấm đồng

Article Details

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

References

Ago, H., Ito, Y., Mizuta, N., Yoshida, K., Hu, B., & Orofeo, C. M. (2010). Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire. Acsnano, 4(12), 7407–7414. https://doi.org/10.1021/nn102519b

Bae, S., Kim, H., Lee, Y., Xu, X., Park, J. S., Zheng, Y., Balakrishnan, J., Lei, T., Ri Kim, H., Song, Y. Il, Kim, Y. J., Kim, K. S., Özyilmaz, B., Ahn, J. H., Hong, B. H., & Iijima, S. (2010). Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nature Nanotechnology, 5(8), 574–578. https://doi.org/10.1038/nnano.2010.132

Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008). Superior Thermal Conductivity of Single-Layer Graphene. Nano Letters, 8(3), 902–907. https://doi.org/10.1021/nl0731872

Bhaviripudi, S., Jia, X., Dresselhaus, M. S., & Kong, J. (2010). Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst. Nano Letters, 10(10), 4128–4133. https://doi.org/10.1021/nl102355e

Bolotin, K. I., Sikes, K. J., Jiang, Z., Klima, M., Fudenberg, G., Hone, J., Kim, P., & Stormer, H. L. (2008). Ultrahigh electron mobility in suspended graphene. Solid State Communications, 146(9–10), 351–355. https://doi.org/10.1016/j.ssc.2008.02.024

Coraux, J., N’Diaye, A. T., Busse, C., & Michely, T. (2008). Structural coherency of graphene on Ir(111). Nano Letters, 8(2), 565–570. https://doi.org/10.1021/nl0728874

Dathbun, A., & Chaisitsak, S. (2013). Effects of three parameters on graphene synthesis by chemical vapor deposition. 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013, 1, 1018–1021. https://doi.org/10.1109/NEMS.2013.6559895

De Heer, W. A., Berger, C., Wu, X., Sprinkle, M., Hu, Y., Ruan, M., Stroscio, J. A., First, P. N., Haddon, R., Piot, B., Faugeras, C., Potemski, M., & Moon, J. S. (2010). Epitaxial graphene electronic structure and transport. Journal of Physics D: Applied Physics, 43(37). https://doi.org/10.1088/0022-3727/43/37/374007

Emtsev, K. V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G. L., Ley, L., McChesney, J. L., Ohta, T., Reshanov, S. A., Röhrl, J., Rotenberg, E., Schmid, A. K., Waldmann, D., Weber, H. B., & Seyller, T. (2009). Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials, 8(3), 203–207. https://doi.org/10.1038/nmat2382

Gao, L., Ren, W., Xu, H., Jin, L., Wang, Z., Ma, T., Ma, L. P., Zhang, Z., Fu, Q., Peng, L. M., Bao, X., & Cheng, H. M. (2012). Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum. Nature Communications, 3. https://doi.org/10.1038/ncomms1702

Hernandez, Y., Nicolosi, V., Lotya, M., Blighe, F. M., Sun, Z., De, S., McGovern, I. T., Holland, B., Byrne, M., Gun’ko, Y. K., Boland, J. J., Niraj, P., Duesberg, G., Krishnamurthy, S., Goodhue, R., Hutchison, J., Scardaci, V., Ferrari, A. C., & Coleman, J. N. (2008). High-yield production of graphene by liquid-phase exfoliation of graphite. Nature Nanotechnology, 3(9), 563–568. https://doi.org/10.1038/nnano.2008.215

Kaplas, T., Zolotukhin, A., & Svirko, Y. (2011). Thickness determination of graphene on metal substrate by reflection spectroscopy. Optics Express, 19(18), 17226. https://doi.org/10.1364/oe.19.017226

Li, X., Cai, W., An, J., Kim, S., Nah, J., Yang, D., Piner, R., Velamakanni, A., Jung, I., Tutuc, E., Banerjee, S. K., Colombo, L., & Ruoff, R. S. (2009). Large-area synthesis of high-quality and uniform graphene films on copper foils. Science, 324(5932), 1312–1314. https://doi.org/10.1126/science.1171245

Mattevi, C., Kim, H., & Chhowalla, M. (2011). A review of chemical vapour deposition of graphene on copper. Journal of Materials Chemistry, 21(10), 3324–3334. https://doi.org/10.1039/c0jm02126a

Milenov, T. I., Valcheva, E., & Popov, V. N. (2017). Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001) Si Substrates by CVD. Journal of Spectroscopy, 2017. https://doi.org/10.1155/2017/3495432

Muñoz, R., & Gómez-Aleixandre, C. (2013). Review of CVD synthesis of graphene. Chemical Vapor Deposition, 19(10–12), 297–322. https://doi.org/10.1002/cvde.201300051

Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., Firsov, A. A. (2004). Electric Field Effect in Atomically Thin Carbon Films. Science, 306(5696), 666–669. https://doi.org/10.1016/j.medcli.2015.04.005

Pallecchi, E., Lafont, F., Cavaliere, V., Schopfer, F., Mailly, D., Poirier, W., & Ouerghi, A. (2014). High electron mobility in epitaxial graphene on 4H-SiC(0001) via post-growth annealing under hydrogen. Scientific Reports, 4, 1–7. https://doi.org/10.1038/srep04558

Park, S., & Ruoff, R. S. (2009). Chemical methods for the production of graphenes. Nature Nanotechnology, 4(4), 217–224. https://doi.org/10.1038/nnano.2009.58

Pham, T. T., Huynh, T. H., Do, Q. H., & Sporken, R. (2018). Stack of Graphene/Copper Foils/Graphene by Low-Pressure Chemical Vapor Deposition as a Thermal Interface Material. Journal of Electronic Materials, 47(12), 7476–7483. https://doi.org/10.1007/s11664-018-6689-4

Ramli, N., Nayan, N. A., Lee, H. W., & Embong, S. S. (2015). Analysis of the effect of growth parameters on graphene synthesized by chemical vapor deposition. Journal of Nanoelectronics and Optoelectronics, 10(1), 50–55. https://doi.org/10.1166/jno.2015.1689

Regmi, M., Chisholm, M. F., & Eres, G. (2012). The effect of growth parameters on the intrinsic properties of large-area single layer graphene grown by chemical vapor deposition on Cu. Carbon, 50(1), 134–141. https://doi.org/10.1016/j.carbon.2011.07.063

Reina, A., Jia, X., Ho, J., Nezich, D., Son, H., Bulovic, V., Dresselhaus, M. S., & Kong, J. (2008). Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition. American Chemical Society, 1–6. https://doi.org/10.1021/nl801827v

Sutter, P. W., Flege, J. I., & Sutter, E. A. (2008). Epitaxial graphene on ruthenium. Nature Materials, 7(5), 406–411. https://doi.org/10.1038/nmat2166

Yu, Q., Lian, J., Siriponglert, S., Li, H., Chen, Y. P., & Pei, S. S. (2008). Graphene segregated on Ni surfaces and transferred to insulators. Applied Physics Letters, 93(11), 1–4. https://doi.org/10.1063/1.2982585