A simulation of zinc oxide nanowire field-effect transistors
Abstract
We report the simulation results of the field-effect transistor (FET) with various gate structures in order to find the FETs having the best electrical properties. We changed the ?gate configuration" with different arrangement gates (single-gate, double-gate, ordinary triple-gate, Pi-gate, omega-gate and gate all around (GAA)). Based on the simulation data, we drawn the Volt-Ampere characteristics lines (I-V). Then, we calculated the physical parameters affecting the operation of FETs including: threshold voltage, subthreshold slope, saturation currents, the on-off current ratio. Our simulations showed that the gate all around structure has better properties than the other structures, especially this structure restricts the short-channel effects.
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References
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